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Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport
(University of Nottingham, 2016-06-01)
We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 – 100 nm can be grown on SiO2/Si, mica and graphite using a physical vapour transport method. The β-In2Se3 layers are chemically stable at room temperature ...
Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe
(The University of Nottingham, 2018-05)
We demonstrate that γ-InSe and the α, β and γ phases of In2Se3 can be grown epitaxially on ε-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can ...