Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe
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Publication date
2018-05Creators
Balakrishnan, Nilanthy
Patane, Amalia
Beton, Peter
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We demonstrate that γ-InSe and the α, β and γ phases of In2Se3 can be grown epitaxially on ε-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different phases of InxSey depending on the position of the substrate within the furnace. The uniform cleaved surface of ε-GaSe enables the epitaxial growth of the InxSey layers, which are aligned over large areas. The InxSey epilayers are characterised using Raman, photoluminescence, X-ray photoelectron and electron dispersive X-ray spectroscopies. Each InxSey phase and stoichiometry exhibits distinct optical and vibrational properties, providing a tuneable photoluminescence emission range from 1.3 eV to ~ 2 eV suitable for exploitation in electronics and optoelectronics.
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Subjects
- Indium compounds
- Semiconductors -- Optical properties
- Photoluminescence
- Stoichiometry
- Indium Selenide, III-VI van der Waals layered crystals, 2D materials, physical vapour transport
- Physical sciences::Physics::Optical physics, Laser physics
- Physical sciences::Physics::Applied physics, Engineering physics
- Q Science::QC Physics::QC350 Optics. Light, including spectroscopy
- Q Science::QC Physics::QC170 Atomic physics. Constitution and properties of matter
Divisions
- University of Nottingham, UK Campus::Faculty of Science::School of Physics and Astronomy
Deposit date
2018-05-21Data type
Journal ArticleFunders
- Engineering & Physical Sciences Research Council
- Horizon 2020 Graphene Flagship
Grant number
- EP/M012700/1
- EP/K005138/1
- 604391
Collection dates
- August 2016 - February 2018
Coverage
- Nottingham, UK
Data collection method
ExperimentResource languages
- en