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      Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe

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      EDX of InxSey growth on bulk GaSe substrate (2.062Mb)
      EDX of InxSey growth on exfoliated layers of GaSe (5.950Mb)
      AFM image of InxSey growth on GaSe (158.7Kb)
      Room temperature and low temperature PL of InxSey layers grown on exfoliated GaSe (3.817Mb)
      Raman spectra of InxSey layers grown on exfoliated GaSe (148.4Kb)
      Power dependent PL emission of gamma-In2Se3 grown on exfoliated GaSe (2.396Mb)
      Temperature dependent PL emission of gamma-In2Se3 grown on exfoliated GaSe (6.327Mb)
      XPS of In2Se3 layers grown on GaSe substrate (208.8Kb)
      Publication date
      2018-05
      Creators
      Balakrishnan, Nilanthy
      Patane, Amalia
      Beton, Peter
      Metadata
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      Description
      We demonstrate that γ-InSe and the α, β and γ phases of In2Se3 can be grown epitaxially on ε-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different phases of InxSey depending on the position of the substrate within the furnace. The uniform cleaved surface of ε-GaSe enables the epitaxial growth of the InxSey layers, which are aligned over large areas. The InxSey epilayers are characterised using Raman, photoluminescence, X-ray photoelectron and electron dispersive X-ray spectroscopies. Each InxSey phase and stoichiometry exhibits distinct optical and vibrational properties, providing a tuneable photoluminescence emission range from 1.3 eV to ~ 2 eV suitable for exploitation in electronics and optoelectronics.
      External URI
      • https://rdmc.nottingham.ac.uk/handle/internal/359
      DOI
      • http://doi.org/10.17639/nott.355
      Related publication DOI
      • 10.1088/2053-1583/aac479
      Subjects
      • Indium compounds
      • Semiconductors -- Optical properties
      • Photoluminescence
      • Stoichiometry
      • Indium Selenide, III-VI van der Waals layered crystals, 2D materials, physical vapour transport
      • Physical sciences::Physics::Optical physics, Laser physics
      • Physical sciences::Physics::Applied physics, Engineering physics
      • Q Science::QC Physics::QC350 Optics. Light, including spectroscopy
      • Q Science::QC Physics::QC170 Atomic physics. Constitution and properties of matter
      Divisions
      • University of Nottingham, UK Campus::Faculty of Science::School of Physics and Astronomy
      Deposit date
      2018-05-21
      Data type
      Journal Article
      Funders
      • Engineering & Physical Sciences Research Council
      • Horizon 2020 Graphene Flagship
      Grant number
      • EP/M012700/1
      • EP/K005138/1
      • 604391
      Collection dates
      • August 2016 - February 2018
      Coverage
      • Nottingham, UK
      Data collection method
      Experiment
      Resource languages
      • en
      Publisher
      The University of Nottingham

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