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Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe
(The University of Nottingham, 2018-05)
We demonstrate that γ-InSe and the α, β and γ phases of In2Se3 can be grown epitaxially on ε-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can ...