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dc.contributor.authorBeton, Peteren_UK
dc.contributor.authorSummerfield, Alexen_UK
dc.contributor.authorDavies, Andrewen_UK
dc.contributor.otherKorolkov, Vladimir V.en_UK
dc.contributor.otherCheng, Tinen_UK
dc.contributor.otherCho, Yongjinen_UK
dc.contributor.otherMellor, Chrisen_UK
dc.contributor.otherFoxon, Tomen_UK
dc.contributor.otherNovikov, Sergeien_UK
dc.contributor.otherEaves, Laurenceen_UK
dc.contributor.otherKhlobystov, Andreien_UK
dc.date.accessioned2016-04-14T09:31:08Z
dc.date.available2016-04-14T09:31:08Z
dc.date.issued2016-02-01
dc.identifier.urihttps://rdmc.nottingham.ac.uk/handle/internal/38
dc.description.abstractGraphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are highly strained. Topological defects in the moiré patterns are observed and attributed to the relaxation of graphene islands which nucleate at different sites and subsequently coalesce. In addition, cracks are formed leading to strain relaxation, highly anisotropic strain fields, and abrupt boundaries between regions with different moiré periods. These cracks can also be formed by modification of the layers with a local probe resulting in the contraction and physical displacement of graphene layers. The Raman spectra of regions with a large moiré period reveal split and shifted G and 2D peaks confirming the presence of strain. Our work demonstrates a new approach to the growth of epitaxial graphene and a means of generating and modifying strain in graphene.en_UK
dc.language.isoenen_UK
dc.publisherUniversity of Nottinghamen_UK
dc.subject.lcshEpitaxyen_UK
dc.subject.lcshGraphene -- Mechanical propertiesen_UK
dc.subject.lcshStrains and stressesen_UK
dc.titleStrain-engineered graphene grown on hexagonal boron nitride by molecular beam epitaxyen_UK
dc.identifier.doihttp://doi.org/10.17639/nott.35
dc.subject.jacsJACS Subjects::Physical sciences::Materials scienceen_UK
dc.subject.jacsJACS Subjects::Physical sciences::Physics::Chemical physics, Solid-state physicsen_UK
dc.subject.jacsJACS Subjects::Physical sciences::Chemistry::Physical chemistryen_UK
dc.subject.lcLibrary of Congress Subject Areas::Q Science::QC Physics::QC170 Atomic physics. Constitution and properties of matteren_UK
dc.subject.lcLibrary of Congress Subject Areas::Q Science::QD Chemistry::QD450 Physical and theoretical chemistryen_UK
uon.divisionFaculties, Schools and Departments::University of Nottingham, UK Campus::Faculty of Science::School of Physics and Astronomyen_UK
uon.funder.controlledFunders::Engineering & Physical Sciences Research Councilen_UK
uon.datatypeScanning Probe Microscopy Images, Raman spectraen_UK
uon.funder.freeLeverhulme Trusten_UK
uon.grantEP/K040243/1en_UK
uon.grantEP/L013908/1en_UK
uon.grantRPG-2014-129en_UK
uon.collectionmethodAsylum Cypher Atomic Force Microscope, Horiba LABRAM Raman microscopeen_UK
uon.rightscontactUniversity of Nottinghamen_UK
uon.preservation.rarelyaccessedtrue
dc.relation.doi10.1038/srep22440en_UK


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