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Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation

dc.contributor.authorPatane, Amalia
dc.contributor.authorBalakrishnan, Nilanthy
dc.date.accessioned2017-03-20T09:27:42Z
dc.date.available2017-03-20T09:27:42Z
dc.date.issued2017-03-20
dc.identifier.urihttps://rdmc.nottingham.ac.uk/handle/internal/76
dc.description.abstractData collection on the effects of thermal and laser annealing on the electronic properties of InSeen_UK
dc.language.isoenen_UK
dc.publisherUniversity of Nottinghamen_UK
dc.relation.urihttps://doi.org/10.1088/2053-1583/aa61e0en_UK
dc.subject.lcshIndium compoundsen_UK
dc.subject.lcshDiodes, Semiconductoren_UK
dc.subject.lcshNanostructured materialsen_UK
dc.subject.lcshIndium compounds -- Oxidationen_UK
dc.subject.lcshAnnealing of metalsen_UK
dc.titleEngineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidationen_UK
dc.title.alternativeOxidation of InSeen_UK
dc.identifier.doihttp://doi.org/10.17639/nott.73
dc.subject.freeInSe, annealing, oxidationen_UK
dc.subject.jacsPhysical sciences::Physics::Chemical physics, Solid-state physicsen_UK
dc.subject.lcQ Science::QC Physics::QC170 Atomic physics. Constitution and properties of matteren_UK
dc.subject.lcQ Science::QC Physics::QC350 Optics. Light, including spectroscopyen_UK
dc.subject.lcQ Science::QC Physics::QC501 Electricity and magnetismen_UK
dc.date.collection2015-2016en_UK
uon.divisionUniversity of Nottingham, UK Campus::Faculty of Science::School of Physics and Astronomyen_UK
uon.funder.controlledOtheren_UK
uon.funder.controlledEngineering & Physical Sciences Research Councilen_UK
uon.datatypeImages (jpg), power point and origin files.en_UK
uon.funder.freeEuropean Graphene Flagshipen_UK
uon.funder.freeThe National Academy of Sciences of Ukraineen_UK
uon.grantEP/M012700/1en_UK
uon.grantEP/K005138/1en_UK
uon.grant604391en_UK
dc.relation.doi10.1088/2053-1583/aa61e0en_UK


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