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dc.contributor.authorSummerfield, Alex
dc.contributor.authorDavies, Andrew
dc.contributor.authorBeton, Peter
dc.contributor.authorDiez Albar, Juan
dc.contributor.authorThomas, James
dc.contributor.authorCheng, Tin s.
dc.contributor.otherCheng, Tin s.
dc.contributor.otherKorolkov, Vladimir V.
dc.contributor.otherGoodey, Nathan L.
dc.contributor.otherMellor, Christopher J.
dc.contributor.otherWatanabe, Kenji
dc.contributor.otherKhlobystov, Andrei N.
dc.contributor.otherTaniguchi, Takashi
dc.contributor.otherFoxon, C. Thomas
dc.contributor.otherEaves, Laurence
dc.contributor.otherNovikov, Sergei V.
dc.contributor.otherStapleton, Emily
dc.date.accessioned2017-12-19T16:56:56Z
dc.date.available2017-12-19T16:56:56Z
dc.date.issued2018-01-01
dc.identifier.urihttps://rdmc.nottingham.ac.uk/handle/internal/340
dc.description.abstractLattice-matched graphene on hexagonal boron nitride is expected to lead to the formation of a band-gap but requires the formation of highly strained material and has not hitherto been realised. We demonstrate that aligned, lattice-matched graphene can be grown by molecular beam epitaxy using substrate temperatures in the range 1600-1710 °C and coexists with a topologically-modified moiré pattern, and with regions of strained graphene which have giant moiré periods up to ~80 nm. Raman spectra reveal narrow red-shifted peaks due to uniform isotropic strain, while the giant moiré patterns result in complex splitting of Raman peaks due to strain variations across the moiré unit cell. The latticematched graphene has a lower conductance than both the Frenkel-Kontorova-type dislocation lines, and also the topological defects where they terminate. We relate these results to theoretical models of band-gap formation in graphene/boron nitride heterostructures.en_UK
dc.language.isoenen_UK
dc.publisherThe University of Nottinghamen_UK
dc.titleGiant moiré patterns and lattice-matched epitaxial graphene grownen_UK
dc.identifier.doihttp://doi.org/10.17639/nott.336
dc.subject.freeEpitaxy, Graphene -- Mechanical properties, Strains and stresses, Raman, AFMen_UK
dc.subject.jacsPhysical sciences::Chemistry::Physical chemistryen_UK
dc.subject.jacsPhysical sciences::Physics::Chemical physics, Solid-state physicsen_UK
dc.subject.jacsPhysical sciences::Materials scienceen_UK
dc.subject.lcQ Science::QC Physics::QC170 Atomic physics. Constitution and properties of matteren_UK
dc.subject.lcQ Science::QD Chemistry::QD450 Physical and theoretical chemistryen_UK
uon.divisionUniversity of Nottingham, UK Campus::Faculty of Science::School of Chemistryen_UK
uon.divisionUniversity of Nottingham, UK Campus::Faculty of Science::School of Physics and Astronomyen_UK
uon.funder.controlledEngineering & Physical Sciences Research Councilen_UK
uon.datatypeScanning Probe Microscopy Images, Raman spectraen_UK
uon.funder.freeLeverhulme Trusten_UK
uon.collectionmethodAsylum Cypher Atomic Force Microscope, Horiba LABRAM Raman microscopeen_UK
uon.preservation.rarelyaccessedtrue
dc.relation.doi10.1021/acs.nanolett.7b04453en_UK


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