Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy
Description
Integration of graphene and hexagonal boron nitride (hBN) in lateral heterostructures has provided a route to broadly engineer the material properties by quantum confinement of electrons or introduction of novel electronic and magnetic states at the interface. In this work we demonstrate lateral heteroepitaxial growth of graphene nanoribbons (GNRs) passivated by hBN using high-temperature molecular beam epitaxy (HT-MBE) to grow graphene in oriented hBN trenches formed ex-situ by catalytic nanoparticle etching. High resolution atomic force microscopy (AFM) reveals that graphene nanoribbons grow epitaxially from the etched hBN edges, and merge to form a graphene nanoribbon network passivated by hBN. Using conductive AFM we probe the nanoscale electrical properties of the nanoribbons and observe quasiparticle interference patterns caused by intervalley scattering at the graphene/hBN interface, which carries implications for the potential transport characteristics of hBN passivated GNR devices.
External URI
Subjects
- Nanostructured materials
- Nanotechnology
- Molecular beam epitaxy
- Graphene
- graphene nanoribbons, hexagonal boron nitride, lateral heterostructure, conductive AFM, molecular beam epitaxy, nanoparticle etching
- Technologies::Materials technology not otherwise specified::Materials technology
- T Technology::T Technology (General)
Divisions
- University of Nottingham, UK Campus
Research institutes and centres
- University of Nottingham, UK Campus
Deposit date
2023-02-07Data type
Atomic force microscopy imagesContributors
- Cheng, Tin
- James, Tyler
- Khlobystov, Andrei
- Mellor, Chris
- Novikov, Sergei
- Beton, Peter
Funders
- Engineering & Physical Sciences Research Council
Grant number
- EP/K040243/1
- EP/P019080/1
- EP/V05323X/1
Data collection method
Atomic force microscopyResource languages
- en