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The direct-to-indirect band gap crossover in two-dimensional van der Waals indium selenide crystals
(The University of Nottingham, 2017-01-03)
The electronic band structure of van der Waals (vdW) layered crystals has properties that depend on the composition, thickness and stacking of the component layers. Here we use density functional theory and high field ...
Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe
(The University of Nottingham, 2018-05)
We demonstrate that γ-InSe and the α, β and γ phases of In2Se3 can be grown epitaxially on ε-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can ...
Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation
(University of Nottingham, 2017-03-20)
Data collection on the effects of thermal and laser annealing on the electronic properties of InSe