Now showing items 1-6 of 6
The direct-to-indirect band gap crossover in two-dimensional van der Waals indium selenide crystals
(The University of Nottingham, 2017-01-03)
The electronic band structure of van der Waals (vdW) layered crystals has properties that depend on the composition, thickness and stacking of the component layers. Here we use density functional theory and high field ...
Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe
(The University of Nottingham, 2018-05)
We demonstrate that γ-InSe and the α, β and γ phases of In2Se3 can be grown epitaxially on ε-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can ...
Resonant Zener tunnelling via zero-dimensional states in a narrow gap diode
(University of Nottingham, 2016-11-01)
The data contains measured current-voltage characteristics and simulated energy band profiles describing Zener tunnelling via zero-dimensional states in a narrow gap diode. In our devices, a narrow quantum well of the ...
Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport
(University of Nottingham, 2016-06-01)
We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 – 100 nm can be grown on SiO2/Si, mica and graphite using a physical vapour transport method. The β-In2Se3 layers are chemically stable at room temperature ...
Resonant tunnelling into the two-dimensional subbands of InSe layers
(The University of Nottingham, 2020-01-20)
Two-dimensional (2D) van der Waals (vdW) crystals have attracted considerable interest for digital electronics beyond Si-based complementary metal oxide semiconductor technologies. Despite the transformative success of ...
Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation
(University of Nottingham, 2017-03-20)
Data collection on the effects of thermal and laser annealing on the electronic properties of InSe