Browsing Public Research Data by Subject "boron nitride, direct gap semiconductor, ultra-violet, monolayer"
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Direct band-gap crossover in epitaxial monolayer boron nitride
(The University of Nottingham, 2019-06-28)Hexagonal boron nitride is a large band-gap insulating material which complements the electronic and optical properties of graphene and the transition metal dichalcogenides. However, the intrinsic optical properties of ...