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Now showing items 1-5 of 5
Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport
(University of Nottingham, 2016-06-01)
We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 – 100 nm can be grown on SiO2/Si, mica and graphite using a physical vapour transport method. The β-In2Se3 layers are chemically stable at room temperature ...
Giant moiré patterns and lattice-matched epitaxial graphene grown
(The University of Nottingham, 2018-01-01)
Lattice-matched graphene on hexagonal boron nitride is expected to lead to the formation of a band-gap but requires the formation of highly strained material and has not hitherto been realised. We demonstrate that aligned, ...
Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe
(The University of Nottingham, 2018-05)
We demonstrate that γ-InSe and the α, β and γ phases of In2Se3 can be grown epitaxially on ε-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can ...
Step-flow growth of graphene-boron nitride lateral heterostructures by molecular beam epitaxy
(The University of Nottingham, 2020-04-20)
Integration of graphene and hexagonal boron nitride (hBN) into lateral heterostructures has drawn focus due to the ability to broadly engineer the material properties. Hybrid monolayers with tuneable bandgaps have been ...
Fluorescence and electroluminescence of J-aggregated polythiophene monolayers on hexagonal boron nitride
(The University of Nottingham, 2020-09-15)
The photophysics of a semiconducting polymer is manipulated through molecular self-assembly on an insulating surface. Adsorption of polythiophene (PT) monolayers on hexagonal boron nitride (hBN) leads to a structurally-induced ...