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Strain-engineered graphene grown on hexagonal boron nitride by molecular beam epitaxy
(University of Nottingham, 2016-02-01)
Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, ...
Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport
(University of Nottingham, 2016-06-01)
We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 – 100 nm can be grown on SiO2/Si, mica and graphite using a physical vapour transport method. The β-In2Se3 layers are chemically stable at room temperature ...