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Strain-engineered graphene grown on hexagonal boron nitride by molecular beam epitaxy
(University of Nottingham, 2016-02-01)
Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, ...
Giant moiré patterns and lattice-matched epitaxial graphene grown
(The University of Nottingham, 2018-01-01)
Lattice-matched graphene on hexagonal boron nitride is expected to lead to the formation of a band-gap but requires the formation of highly strained material and has not hitherto been realised. We demonstrate that aligned, ...