Browsing by Subject "Molecular beam epitaxy"
Now showing items 1-4 of 4
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Defect-Induced Doping and Chemisorption of O2 in Se Deficient GaSe Monolayers
(The University of Nottingham, 2024-11-22)Original data for the Owing to their atomically thin nature, structural defects in two dimensional materials often play a dominating role in their electronic and optical properties. Here, we grow epitaxial GaSe monolayers ... -
Direct band-gap crossover in epitaxial monolayer boron nitride
(The University of Nottingham, 2019-06-28)Hexagonal boron nitride is a large band-gap insulating material which complements the electronic and optical properties of graphene and the transition metal dichalcogenides. However, the intrinsic optical properties of ... -
Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy
(The University of Nottingham, 2023-02-07)Integration of graphene and hexagonal boron nitride (hBN) in lateral heterostructures has provided a route to broadly engineer the material properties by quantum confinement of electrons or introduction of novel electronic ... -
Moiré-modulated conductance of hexagonal boron nitride tunnel barriers
(The University of Nottingham, 2018-07-16)Monolayer hexagonal boron nitride (hBN) tunnel barriers investigated using conductive atomic force microscopy reveal moiré patterns in the spatial maps of their tunnel conductance consistent with the formation of a moiré ...