Browsing by Author "Cheng, Tin S."

Now showing items 1-3 of 3

    • Direct band-gap crossover in epitaxial monolayer boron nitride 

      Beton, Peter (The University of Nottingham, 2019-06-28)
      Hexagonal boron nitride is a large band-gap insulating material which complements the electronic and optical properties of graphene and the transition metal dichalcogenides. However, the intrinsic optical properties of ...

    • Giant moiré patterns and lattice-matched epitaxial graphene grown 

      Summerfield, Alex; Davies, Andrew; Beton, Peter; Diez Albar, Juan; Thomas, James; Cheng, Tin s. (The University of Nottingham, 2018-01-01)
      Lattice-matched graphene on hexagonal boron nitride is expected to lead to the formation of a band-gap but requires the formation of highly strained material and has not hitherto been realised. We demonstrate that aligned, ...

    • Moiré-modulated conductance of hexagonal boron nitride tunnel barriers 

      Summerfield, Alex (The University of Nottingham, 2018-07-16)
      Monolayer hexagonal boron nitride (hBN) tunnel barriers investigated using conductive atomic force microscopy reveal moiré patterns in the spatial maps of their tunnel conductance consistent with the formation of a moiré ...